31.080.30: Transistors

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  1. HISTORICAL

    ASTM F528-99▹

    This document has been replaced. View the most recent version.

    Standard Test Method of Measurement of Common-Emitter D-C Current Gain of Junction Transistors

    standard by ASTM International, 12/10/1999.

    Languages: English

    Historical Editions: ASTM F528-99(2005)

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  2. MOST RECENT

    ASTM F528-99(2005)▹ [ Withdrawn ]

    Standard Test Method of Measurement of Common-Emitter D-C Current Gain of Junction Transistors (Withdrawn 2011)

    standard by ASTM International, 01/01/2005.

    Languages: English

    Historical Editions: ASTM F528-99

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  3. HISTORICAL

    ASTM F676-97▹

    This document has been replaced. View the most recent version.

    Standard Test Method for Measuring Unsaturated TTL Sink Current

    standard by ASTM International, 01/01/1997.

    Languages: English

    Historical Editions: ASTM F676-97(2003)

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  4. HISTORICAL

    ASTM F996-11▹

    This document has been replaced. View the most recent version.

    Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

    standard by ASTM International, 01/01/2011.

    Languages: English

    Historical Editions: ASTM F996-11(2018), ASTM F996-10, ASTM F996-98(2003), ASTM F996-98

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    ASTM F996-11(2018)▹ [ Withdrawn ]

    Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics (Withdrawn 2023)

    standard by ASTM International, 03/01/2018.

    Languages: English

    Historical Editions: ASTM F996-11, ASTM F996-10, ASTM F996-98(2003), ASTM F996-98

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  6. HISTORICAL

    ASTM F996-98▹

    This document has been replaced. View the most recent version.

    Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

    standard by ASTM International, 05/10/1998.

    Languages: English

    Historical Editions: ASTM F996-11(2018), ASTM F996-11, ASTM F996-10, ASTM F996-98(2003)

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