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About This Item

 

Full Description

This part of IEC 60747-7 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors.

– Small signal transistors (excluding switching and microwave applications);
– Linear power transistors (excluding switching, high-frequency, and microwave applications);
– High-frequency power transistors for amplifier and oscillator applications;
– Switching transistors for high speed switching and power switching applications;
– Resistor biased transistors.

Cross References:
IEC 60747-1:2006
IEC 60747-4:2007
IEC 60050-521:2002


Incorporates the following:
Amendment, October 2019
 

Document History

  1. BS IEC 60747-7:2010+A1:2019

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    Semiconductor devices. Discrete devices-Bipolar transistors

    • Most Recent
  2. BS IEC 60747-7:2010


    Semiconductor devices. Discrete devices-Bipolar transistors

    • Historical Version
  3. BS 07/30164950 DC


    IEC 60747-7. Semiconductor devices. Discrete devices. Part 7. Bipolar transistors (BTRs)

    • Historical Version
  4. BS IEC 60747-7-5:2005


    Semiconductor devices. Discrete devices-Bipolar transistors for power switching applications

    • Historical Version
  5. BS IEC 60747-7:2000


    Discrete semiconductor devices and integrated circuits-Bipolar transistors

    • Historical Version
  6. BS 6493-1.7:1989


    Semiconductor devices. Discrete devices-Recommendations for bipolar transistors

    • Historical Version