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BS IEC 60747-9:2019

Semiconductor devices-Discrete devices. Insulated-gate bipolar transistors (IGBTs)

standard by British Standard / International Electrotechnical Commission , 11/22/2019

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About This Item

 

Full Description

This part of IEC 60747 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).

Cross References:
IEC 61340 (all parts)
IEC 60747-1:2006
IEC 60747-1:2006/AMD1:2010
IEC 60747-7:2010
IEC 60050-521
IEC 60747-6
IEC 60747-2


All current amendments available at time of purchase are included with the purchase of this document.
 

Product Details

Published:
11/22/2019
ISBN(s):
9780580947148
Number of Pages:
82
File Size:
1 file , 2.8 MB
Product Code(s):
30343733, 30343733, 30343733
 

Document History

  1. BS IEC 60747-9:2019

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    Semiconductor devices-Discrete devices. Insulated-gate bipolar transistors (IGBTs)

    • Most Recent

  2. BS IEC 60747-9:2007


    Semiconductor devices. Discrete devices-Insulated-gate bipolar transistors (IGBTs)

    • Historical Version

  3. BS 04/30113287 DC


    IEC 60747-9 ED.2. Semiconductor devices. Discrete devices. Part 9. Insulated gate bipolar transistors (IGBTS)

    • Historical Version

  4. BS IEC 60747-9:1998


    Semiconductor devices. Discrete devices-Insulated-gate bipolar transistors (IGBTs)

    • Historical Version