2684313

DANSK DSF/PREN IEC 63275-2 [ Draft ]

Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 2: Test method for bipolar degradation due to body diode operation

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DRAFT

This part of IEC 63275-2 gives the test method and a procedure using this method to evaluate the on-state voltage change and on-resistance change of silicon carbide (SiC) 35 power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

 

Product Details

Edition:
21
Number of Pages:
12
File Size:
1 file , 1.1 MB
Product Code(s):
DSF-009, DSF-009