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ESD TR5.4-03-11

ESD Association Technical Report For Electrostatic Discharge Sensitivity Testing - Latch-Up Sensitivity Testing of CMOS/BiCMOS Integrated Circuits, Transient Latch-up Testing - Component Level, Supply Transient Stimulation

Report / Survey by EOS/ESD Association, Inc. , 2011

Authors: Working Group 5.4, Transient Latch-up

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Full Description

The information and procedures defined in this technical report may be used to search for latch-up sensitive layouts within integrated circuits. The stress levels and stimuli parameter values defined may be used for a wide range of devices. Levels and values can be scaled up or down to suit the requirements of the actual device under test and types of transient stimuli being used.
 

Product Details

Published:
2011
ANSI:
ANSI Approved
Number of Pages:
36
File Size:
1 file , 230 KB
Note:
This product is unavailable in Russia, Ukraine, Belarus
 

Document History

  1. ESD TR5.4-03-11

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    ESD Association Technical Report For Electrostatic Discharge Sensitivity Testing - Latch-Up Sensitivity Testing of CMOS/BiCMOS Integrated Circuits, Transient Latch-up Testing - Component Level, Supply Transient Stimulation

    • Most Recent

  2. ESD SP5.4-2008


    Transient Latch-up Testing - Component Leve Supply Transient Stimulation

    • Historical Version