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About This Item

 

Full Description

IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.

This publication is to be read in conjunction with IEC 60747-1:2006.
 

Document History

  1. IEC 60747-8 Ed. 3.1 en:2021


    Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

    • Most Recent
  2. IEC 60747-8 Ed. 3.0 b:2010

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    Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

    • Historical Version
  3. IEC 60747-8 Ed. 2.0 b:2000


    S emiconductor devices - Part 8: Field-effect transistors

    • Historical Version
 

Amendments, rulings, supplements, and errata

  1. IEC 60747-8 Amd. 1 Ed. 3.0 e:2021


    Amendment 1 to Semiconductor devices - Discrete devices - Part 8: Field-effect transistors