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IEEE 1005-1998 [ Withdrawn ]

IEEE Standard for Definitions, Symbols, and Characterization of Floating Gate Memory Arrays

standard by IEEE , 02/09/1999

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Full Description

Scope

Modify the present FGA standard to include floating gate "flash" EEPROM's that use Fowler-Nordheim tunneling and/or hot electron injection programming techniques. Hot electron injection EPROM's are included for completeness.

Purpose

Flash EEPROM technology is not currently included in the standard, but is a rapidly growing technology in terms of use. This amendment defines terms used in this technology, explains its operation and limitation. It is intended to assist users in selecting, specifying, using and testing Floating Gate Memory Arrays.

Abstract

Revision Standard - Inactive-Withdrawn. This standard describes the underlying physics and the operation of floating gate memory arrays, specifically, UV erasable EPROM, byte rewritable E 2 PROMs, and block rewritableflash EEPROMs. In addition, reliability hazards are covered with focus on retention, endurance,and disturb. There are also clauses on the issues of testing floating gate arrays and their hardness to ionizing radiation.
 

Product Details

Published:
02/09/1999
ISBN(s):
0738103330, 9780738139524
Number of Pages:
44
File Size:
1 file , 730 KB
Product Code(s):
STDWD94655
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This product is unavailable in Russia, Belarus
 

Document History

  1. IEEE 1005-1998

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    IEEE Standard for Definitions, Symbols, and Characterization of Floating Gate Memory Arrays

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  2. IEEE 1005-1991


    IEEE Standard Definitions and Characterization of Floating Gate Semiconductor Arrays

    • Historical Version