1966081

MIL MIL-PRF-19500/295F

Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB

standard by Military Specifications and Standards , 02/15/2012

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Full Description

This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.
 

Product Details

Published:
02/15/2012
Number of Pages:
11
File Size:
1 file , 180 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus
 

Document History

  1. MIL MIL-PRF-19500/295G


    Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB

    • Most Recent

  2. MIL MIL-PRF-19500/295F

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    Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB

    • Historical Version

  3. MIL MIL-PRF-19500/295E


    Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB

    • Historical Version

  4. MIL MIL-PRF-19500/295D


    Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB

    • Historical Version

  5. MIL MIL-PRF-19500/295C


    Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB

    • Historical Version