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About This Item

 

Full Description

This specification covers the performance requirements for 1,500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device as specified in MIL-PRF-19500.
 

Document History

  1. MIL MIL-PRF-19500/434F


    Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Type 1N5610 through 1N5613, JAN, JANTX, JANTXV, and JANS

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  2. MIL MIL-PRF-19500/434E

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    Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Type 1N5610 through 1N5613, JAN, JANTX, JANTXV, and JANS

    • Historical Version
  3. MIL MIL-PRF-19500/434D


    Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Type 1N5610 through 1N5613, JAN, JANTX, JANTXV, and JANS

    • Historical Version
  4. MIL MIL-PRF-19500/434C


    SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5610 THROUGH 1N5613 JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-S-19500/434B)

    • Historical Version
  5. MIL MIL-S-19500/434B


    SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5610 THROUGH 1N5613 JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-S-19500/434A) (S/S BY MIL-PRF-19500/434C)

    • Historical Version
 

Amendments, rulings, supplements, and errata

  1. MIL MIL-PRF-19500/434E Amendment 2 (all prev amd incorp.)


    Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Type 1N5610 through 1N5613, JAN, JANTX, JANTXV, and JANS

  2. MIL MIL-PRF-19500/434E Amendment 1 (amendment incorporated)


    Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor, Type 1N5610 through 1N5613, JAN, JANTX, JANTXV, and JANS