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About This Item

 

Full Description

MIL-PRF-19500/547F covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
 

Document History

  1. MIL MIL-PRF-19500/547F

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    Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 and 2N6661, JAN, JANTX, JANTXV, and JANS

    • Most Recent
  2. MIL MIL-PRF-19500/547E


    Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 and 2N6661, JAN, JANTX, JANTXV, and JANS

    • Historical Version
  3. MIL MIL-PRF-19500/547D


    Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 and 2N6661, JAN, JANTX, JANTXV, and JANS

    • Historical Version
  4. MIL MIL-PRF-19500/547D Draft


    Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 and 2N6661, JAN, JANTX, JANTXV, and JANS

    • Historical Version
  5. MIL MIL-PRF-19500/547C


    Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 and 2N6661, JAN, JANTX, JANTXV, and JANS

    • Historical Version
  6. MIL MIL-PRF-19500/547B


    SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR (SUPERSEDING MIL-S-19500/547A)

    • Historical Version
  7. MIL MIL-S-19500/547A


    SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6660 AND 2N6661 JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-S-19500/547) (S/S BY MIL-PRF-19500/547B)

    • Historical Version
 

Amendments, rulings, supplements, and errata

  1. MIL MIL-PRF-19500/547F Amendment 1


    Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N6660 and 2N6661, JAN, JANTX, JANTXV, and JANS