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This specification covers the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
 

Document History

  1. MIL MIL-PRF-19500/550D

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    Semiconductor Device, Diode, Silicon, Fast-Recovery, High Current, Encapsulated (Stud and Surface Mount Packages) and Un-capsulated (Die), Types 1N6304, 1N6305, 1N6306, and R Types, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

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  2. MIL MIL-PRF-19500/550C


    Semiconductor Device, Diode, Silicon, Fast-Recovery, High Current, Types 1N6304, 1N6305, 1N6306, and R Types, JAN, JANTX, JANTXV, JANHC, and JANKC

    • Historical Version
  3. MIL MIL-PRF-19500/550B


    SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, HIGH CURRENT TYPES 1N6304, 1N6305, 1N6306 AND R TYPES JAN, JANTX, JANTXV ,JANHC AND JANKC (SUPERSEDING MIL-S-19500/550A)

    • Historical Version
  4. MIL MIL-S-19500/550A


    SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT TYPES 1N6304, 1N6305, 1N6306, AND R TYPES JAN, JANTX, JANTXV, JANHC, AND JANKC (SUPERSEDING MIL-S-19500/550) (S/S BY MIL-PRF-19500/550B)

    • Historical Version