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About This Item

 

Full Description

This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened power transistor intended for use in high density power switching applications. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.
 

Document History

  1. MIL MIL-PRF-19500/634E


    Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7405, 2N7406, 2N7407, and 2N7408, JANSD and JANSR

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  2. MIL MIL-PRF-19500/634D

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    Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7405, 2N7406, 2N7407, and 2N7408, JANSD and JANSR

    • Historical Version
  3. MIL MIL-PRF-19500/634B


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/634A)

    • Historical Version
  4. MIL MIL-PRF-19500/634A


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED, (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/634) (S/S BY MIL-PRF-19500/634B)

    • Historical Version
  5. MIL MIL-PRF-19500/634


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON TYPES 2N7405, 2N7406, 2N7407, AND 2N7408 JANTXD, -R, JANTXVD, -R, AND JANSD, -R (S/S BY MIL-PRF-19500/634A)

    • Historical Version
 

Amendments, rulings, supplements, and errata

  1. MIL MIL-PRF-19500/634D Notice 1 - Validation 1


    Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7405, 2N7406, 2N7407, and 2N7408, JANSD and JANSR