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This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to two radiation levels (‰ÛÏD‰Û and ‰ÛÏR‰Û) are provided for JANTXV and JANS product assurance levels.
 

Document History

  1. MIL MIL-PRF-19500/687D

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    Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (through-Hole Mount Package), Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R

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  2. MIL MIL-PRF-19500/687C


    Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (through-Hole Mount Package), Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R

    • Historical Version
  3. MIL MIL-PRF-19500/687A


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R (SUPERSEDING MIL-PRF-19500/687)

    • Historical Version
  4. MIL MIL-PRF-19500/687


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7509, 2N7510, AND 2N7511 JANTXVD, R AND JANSD, R (S/S BY MIL-PRF-19500/687A)

    • Historical Version