1966721

MIL MIL-PRF-19500/689A

Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R

standard by Military Specifications and Standards , 04/18/2014

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About This Item

 

Full Description

This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
 

Product Details

Published:
04/18/2014
Number of Pages:
20
File Size:
1 file , 230 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus
 

Document History

  1. MIL MIL-PRF-19500/689A

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    Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R

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  2. MIL MIL-PRF-19500/689


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS N-CHANNEL, SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R

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Amendments, rulings, supplements, and errata

  1. MIL MIL-PRF-19500/689A Notice 1 - Validation 1


    Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R