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About This Item

 

Full Description

This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche energy maximum rating (Eas) and maximum avalanche current (Ias) for use in particular power-switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device type.
 

Document History

  1. MIL MIL-PRF-19500/706C

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    Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Types 2N7497T2, 2N7498T2, 2N7499T2, and 2N7561T2 JANTXVR and JANSR

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  2. MIL MIL-PRF-19500/706B


    Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Types 2N7497T2, 2N7498T2, 2N7499T2, and 2N7561T2 JANTXVR and JANSR

    • Historical Version
  3. MIL MIL-PRF-19500/706A


    SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7497T2, 2N7498T2, AND 2N7499T2, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/706)

    • Historical Version
  4. MIL MIL-PRF-19500/706


    SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED(TOTAL DOSE & SINGLE EVENT EFFECTS)TRANSISTOR N-CHANNEL SILICON TYPE 2N7497T2 2N7498T2 2N7499T2 JANTXVR JANSR (S/S BY MIL-PRF-19500/706A)

    • Historical Version
 

Amendments, rulings, supplements, and errata

  1. MIL MIL-PRF-19500/706C Amendment 1


    Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Types 2N7497T2, 2N7498T2, 2N7499T2, and 2N7561T2 JANTXVR and JANSR