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About This Item

 

Full Description

This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor for use in particular power-switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (Eas) and maximum avalanche current (Ias). See 6.5 for unencapsulated JANHC and JANKC die versions.
 

Document History

  1. MIL MIL-PRF-19500/707C

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    Transistor, Field Effect Radiation Hardened (Total Dose and Single Event Effects) N-Channel, Silicon, Types 2N7500U5, 2N7501U5, and 2N7502U5, JANTXVR and JANSR

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  2. MIL MIL-PRF-19500/707B


    Transistor, Field Effect Radiation Hardened (Total Dose and Single Event Effects) N-Channel, Silicon, Types 2N7500U5, 2N7501U5, and 2N7502U5, JANTXVR and JANSR

    • Historical Version
  3. MIL MIL-PRF-19500/707A


    Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7500U5, 2N7501U5, and 2N7502U5, JANTXVR and JANSR

    • Historical Version
  4. MIL MIL-PRF-19500/707


    SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED(TOTAL DOSE & SINGLE EVENT EFFECTS)TRANSISTOR N-CHANNEL SILICON TYPE 2N7500U5 2N7501U5 2N7502U5 JANTXVR JANSR

    • Historical Version
 

Amendments, rulings, supplements, and errata

  1. MIL MIL-PRF-19500/707C Amendment 1


    Transistor, Field Effect Radiation Hardened (Total Dose and Single Event Effects) N-Channel, Silicon, Types 2N7500U5, 2N7501U5, and 2N7502U5, JANTXVR and JANSR