1966881

MIL MIL-PRF-19500/756A

Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Through Hole and Surface Mount, Types 2N7606 and 2N7607 Quality Levels JANTXV and JANS

standard by Military Specifications and Standards , 12/12/2014

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About This Item

 

Full Description

This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
 

Product Details

Published:
12/12/2014
Number of Pages:
18
File Size:
1 file , 260 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus
 

Document History

  1. MIL MIL-PRF-19500/756A

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    Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Through Hole and Surface Mount, Types 2N7606 and 2N7607 Quality Levels JANTXV and JANS

    • Most Recent

  2. MIL MIL-PRF-19500/756


    Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Through Hole and Surface Mount, Types 2N7606 and 2N7607 Quality Levels JANTXV and JANS

    • Historical Version
 

Amendments, rulings, supplements, and errata

  1. MIL MIL-PRF-19500/756A Amendment 1


    Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Through Hole and Surface Mount, Types 2N7606 and 2N7607 Quality Levels JANTXV and JANS