-
-
Available Formats
- Options
- Availability
- Priced From ( in USD )
-
Available Formats
-
- Immediate download
-
$124.00Members pay $93.00
- Add to Cart
-
- Printed Edition
- Ships in 1-2 business days
-
$124.00Members pay $93.00
- Add to Cart
-
- Printed Edition + PDF
- Immediate download
-
$191.00Members pay $143.25
- Add to Cart
Customers Who Bought This Also Bought
-
ISO 6143:2001
Priced From $194.00 -
ISO 14167:2018
Priced From $166.00 -
ISO 15470:2017
Priced From $54.00 -
ISO 15796:2005
Priced From $194.00
About This Item
Full Description
This document specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished samples and for instruments that incorporate an Al or Mg X-ray source, a sample stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this document, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.