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About This Item
Full Description
- Corrections of Euler angle indications in Table 1 and axis directions in Figure 3.
- Definition of "twin" is not explained clearly enough in 3.3.3. Therefore it is revised by a more detailed definition.
- Etch channels maximum number at quartz wafer of seed which do not pass through from surface to back surface are classified for three grades in 4.2.13 a). Users use seed portions of quartz wafers for devices. They request quartz wafers with less etch channels in seeds to reduce defects of devices. The classification of etch channels in seed may prompt a rise in quartz wafer quality.
Document History
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IEC 62276 Ed. 3.0 b:2016
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Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods- Most Recent
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IEC 62276 Ed. 3.0 en:2016
Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods- Historical Version
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IEC 62276 Ed. 2.0 b:2012
Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods- Historical Version
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IEC 62276 Ed. 1.0 en:2005
Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods- Historical Version