31.080.30: Transistors
Search Results
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DIN EN 62373
Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
standard by DIN-adopted European Standard, 01/01/2007.
Languages: German
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DIN EN 120003
Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992
standard by DIN-adopted European Standard, 11/01/1996.
Languages: German
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HISTORICAL
DIN EN IEC 63373 - DRAFT [ Withdrawn ]
This document has been replaced. View the most recent version.
Draft Document - Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices (IEC 63373:2022); German version EN IEC 63373:2022
standard by DIN EN IEC, 08/01/2022.
Languages: German
Historical Editions: DIN EN IEC 63373
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DIN IEC 62416 - DRAFT
Draft Document - Hot Carrier Test on MOS Transistors (IEC 47/1902/CD:2007)
standard by DIN-adopted IEC Standard, 08/01/2007.
Languages: German, English
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DIN IEC 60747-4 - DRAFT
Draft Document - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors (IEC 47E/265/CD:2004)
standard by DIN-adopted IEC Standard, 01/01/2005.
Languages: German, English
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DIN IEC 60747-7 - DRAFT
Draft Document - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors (BTRs) (IEC 47E/324/CD:2007)
standard by DIN-adopted IEC Standard, 09/01/2007.
Languages: German, English
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DIN IEC 60747-8 - DRAFT
Draft Document - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors (IEC 47E/320/CD:2007)
standard by DIN-adopted IEC Standard, 06/01/2007.
Languages: German, English
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MOST RECENT
DIN EN IEC 63373
Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices (IEC 63373:2022); German version EN IEC 63373:2022
standard by DIN EN IEC, 08/01/2023.
Languages: German
Historical Editions: DIN EN IEC 63373 - DRAFT
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DIN EN 62416
Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010
standard by DIN-adopted European Standard, 12/01/2010.
Languages: German
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DIN 4000-19
Tabular layouts of article characteristics for transistors and thyristors
standard by Deutsches Institut Fur Normung E.V. (German National Standard), 12/01/1988.
Languages: German
