1762494

JEDEC JEP139

GUIDELINE FOR CONSTANT TEMPERATURE AGING TO CHARACTERIZE ALUMINUM INTERCONNECT METALLIZATIONS FOR STRESS-INDUCED VOIDING

standard by JEDEC Solid State Technology Association , 12/01/2000

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Full Description

This document describes a constant temperature (isothermal) aging method for testing aluminum (Al) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding. This method is valid for metallization/dielectric systems in which the dielectric is deposited onto the metallization at a temperature considerably above the intended use temperature, and above or equal to the deposition temperature of the metal. Although this is a wafer test, it is not a fast (less than 5 minutes per probe) test. It is intended to be used for lifetime prediction and failure analysis, not for production Go-NoGo lot checking.
 

Product Details

Published:
12/01/2000
Number of Pages:
18
File Size:
1 file , 91 KB
Note:
This product is unavailable in Russia, Ukraine, Belarus