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This specification covers the detail requirements for silicon, PNPN, thyristors for application particularly as controlled rectifier, reverse-blocking triode devices in compatible electronic-equipment circuits. (See 3.2, 3.4, and 6.2 herein.) The prefix "TX" identifies devices meeting the special process-conditioning, testing, and screening requirements in 4.4 herein, and the stringent quality-control (LTPD) requirements in Tables I, II, and III herein.