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DRAFT * W/D S/S BY DS/EN IEC 60749-41

This test method specifies the procedural requirements for performing valid endurance, retention and cross-temperature tests based on a qualification specification. Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or are developed using knowledge-based methods such as in JESD94. The program/erase endurance and data retention test for qualification and monitoring, using the parameter levels specified in JESD47, is considered destructive. The data retention stress may be used as a proxy to replace the high temperature storage life test when the temperature and time meet or exceed qualification requirements. Cross-temperature testing for writing and reading across the data sheet temperature range can be considered when there are demonstrated sensitivities for programming at low and reading at high temperatures or visa-versa. Lesser test parameter levels (e.g., of temperature, number of cycles, retention bake duration) Can be used for screening as long as these parameter levels have been verified by the device manufacturer to be nondestructive; this can be performed anywhere from wafer level to finished device.

 

Document History

  1. DANSK DSF/FPREN IEC 60749-41


    Semiconductor devices – Mechanical and climatic test methods – Part 41: Standard reliability testing methods of non-volatile memory devices

    • Historical Version
  2. DANSK DSF/PREN IEC 60749-41

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    Semiconductor devices – Mechanical and climatic test methods – Part 41: Standard reliability testing methods of non-volatile memory devices

    • Historical Version
  3. DANSK DS/EN IEC 60749-41


    Semiconductor devices – Mechanical and climatic test methods – Part 41: Standard reliability testing methods of non-volatile memory devices

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